Electrical, photoelectrical properties and crystal structure of A2B6 films, grown by laser sputtering

The new static vacuum system with laser-getter evacuation is proposed. The CrxHg1−xSe (x = 0.1; 0.2) and CdxHg1−xSe (x = 0.25; 0.6) thin films are prepared by pulsed laser sputtering in static vacuum and their structural properties are studied as a function of substrate temperature. It is shown that at substrate temperature 360 K the obtained films are polycrystalline, and at 380–390 K they are textured, offering mobilities ∼104 cm2/V·s for CrxHg1−xSe and ∼103 cm2/V·s for CdxHg1−xSe. For the CrxHg1−xSe films on the temperature dependence in the region of 200 K an increase in the Hall coefficient is observed which is attributable to a change in Cr charge state. Laser recrystallization method was also used to obtain CdTe and Cd0.8Mn0.2Te based barrier structures in static vacuum, exhibiting rectifying properties with rectifying factor k = 104 and 30, respectively.