کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673371 | 1008947 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reactive deposition of aluminium-doped zinc oxide thin films using high power pulsed magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reactive deposition of aluminium-doped zinc oxide thin films using high power pulsed magnetron sputtering Reactive deposition of aluminium-doped zinc oxide thin films using high power pulsed magnetron sputtering](/preview/png/1673371.png)
چکیده انگلیسی
High power pulsed magnetron sputtering has been used for depositing Al-doped ZnO films from metallic targets in a reactive process. A new type of process control has been developed in order to stabilize the discharge in the transition region. It has been shown that the process can be stabilized for all operating points at high peak power densities. The discharge characteristics like peak power density and plasma impedance have been analyzed. Films have been deposited at room temperature and 200 °C and resistivities below 400 μΩcm have been obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 14, 30 May 2008, Pages 4472–4477
Journal: Thin Solid Films - Volume 516, Issue 14, 30 May 2008, Pages 4472–4477
نویسندگان
F. Ruske, A. Pflug, V. Sittinger, W. Werner, B. Szyszka, D.J. Christie,