کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673441 1008948 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of Fe-As crystalline films on GaAs(100) by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Growth of Fe-As crystalline films on GaAs(100) by molecular beam epitaxy
چکیده انگلیسی
Crystallinity and magnetic property of binary Fe-As compounds grown on GaAs(001) substrates by molecular beam epitaxy are described. At the substrate temperature of Ts = 300 °C or lower, the growth occurs in the form of polycrystalline diamagnetic FeAs2, whereas, at Ts = 400-500 °C, the growth of single-crystalline FeAs or Fe2As takes place depending on the relative amount of an As beam flux. At Ts = 600 °C, formation of polycrystalline FeAs with Fe-Ga-As ternary compounds starts to take place. Using these binary samples, magnetic susceptibility of FeAs2 and FeAs are extracted and compared with the bulk data. It is also revealed that these binaries do not exhibit photo-enhanced magnetization at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 10, 31 March 2008, Pages 3015-3019
نویسندگان
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