کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673496 1008948 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors
چکیده انگلیسی

Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport properties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 10, 31 March 2008, Pages 3346–3349
نویسندگان
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