کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673507 1008948 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Studies of Electronic Raman scattering in CdS/HgS cylindrical quantum dot quantum well structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Studies of Electronic Raman scattering in CdS/HgS cylindrical quantum dot quantum well structures
چکیده انگلیسی

Electronic Raman scattering (ERS) is investigated in CdS/HgS cylindrical quantum dot quantum well. The ERS cross-section is calculated as a function of the frequency shift. The process involves an interband electronic transition and an intraband transition between quantized subbands. Different scattering configurations are discussed and the selection rules for the processes are also studied. Rich spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 10, 31 March 2008, Pages 3405–3410
نویسندگان
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