Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation

Cu2ZnSnS4 films were grown on Si (100) by vacuum evaporation using elemental Cu, Sn, S and binary ZnS as sources. X-ray diffraction patterns of films grown at different substrate temperatures indicated that polycrystalline growth was suppressed and the orientational growths were relatively induced in a film grown at higher temperatures. Tetragonal structure of Cu2ZnSnS4 films was confirmed by studying RHEED patterns. The existence of c-axis ([001] direction) growth, two kinds of a-axis (〈100〉 direction) growth and four kinds of {112} twins which can be classified as two symmetrical pairs is proposed. Broad emissions at around 1.45 eV and 1.31 eV were observed in the photoluminescence spectrum measured at 13 K.