کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673615 1518085 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental studies on epitaxially grown TiN and VN films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Experimental studies on epitaxially grown TiN and VN films
چکیده انگلیسی

TiN and VN single-layers were grown on (100) and (111) MgO substrates as model systems for future studies of V diffusion and understanding the evolution of the lubricous V2O5 phase on coating surfaces. The present study aims at elucidating the epitaxial quality and microstructure of TiN and VN films grown by unbalanced d.c. magnetron sputtering from Ti and V targets in Ar + N2 on (100) and (111) MgO substrates. X-ray diffraction and electron back-scatter diffraction give evidence for epitaxial growth of the films on both MgO substrate orientations. Transmission electron microscopy studies reveal a cube-on-cube orientation for all film/substrate combinations. The higher dislocation density and larger fraction of misoriented grains for VN films on MgO is explained by the higher growth rate and lattice mismatch compared to TiN. Nanoindentation measurements of the (100) oriented single-crystal films reveal hardness values of ∼35 GPa for TiN and ∼23 GPa for VN.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issues 2–4, 3 December 2007, Pages 369–373
نویسندگان
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