کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1673633 | 1518085 | 2007 | 5 صفحه PDF | دانلود رایگان |
Epitaxial copper layers, 6.6 nm to 1.2 μm thick, were grown on MgO(001) by ultra-high vacuum magnetron sputter deposition at 100 °C. The surface morphology, as determined by in-situ scanning tunneling microscopy, exhibits a regular mound structure. The mounds grow in width w and height h as a function of layer thickness t from h = 3 nm and w = 20 nm for t = 20 nm to h = 5 nm and w = 200 nm for t = 1.2 μm. The resistivity increases with decreasing layer thickness from 1.70 μΩ-cm for t = 1.2 μm to 8.35 μΩ-cm for t = 6.6 nm. The resistivity increase is consistent with the Fuchs–Sondheimer model for completely diffuse surface scattering. The diffuse scattering is attributed to a high density of surface steps, which are separated by less than 1 nm.
Journal: Thin Solid Films - Volume 516, Issues 2–4, 3 December 2007, Pages 465–469