Highly stabilized hydrogenated amorphous silicon solar cells fabricated by triode-plasma CVD

We have developed a highly stabilized hydrogenated amorphous silicon solar cell with extremely low Si–H2 bond density in the i layer using a triode-plasma CVD method. Si–H2 bond density decreased from 1.7 to 0.6 at.%, and correspondingly the degradation ratio of the cell efficiency decreased from 13% to 10% in comparison to the conventional diode system. It was also found that the hydrogen dilution mainly affects Si–H bond density rather than Si–H2 bond density in the films. Further optimization for the TCO/p interface results in the stabilized cell efficiency of 9.22%.