کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673702 1518098 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparative material study on RF and DC magnetron sputtered ZnO:Al films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Comparative material study on RF and DC magnetron sputtered ZnO:Al films
چکیده انگلیسی

ZnO:Al films were prepared on glass substrates by RF and DC sputtering from ceramic ZnO:Al2O3 targets. The film properties of RF sputtered ZnO:Al showed a weak dependence on film thickness and substrate temperature while a strong dependence on sputter pressure and oxygen addition to the process gas was observed. For DC sputtering in static mode at 270 °C a low resistivity of 2.3–5 × 10− 4 Ω cm was obtained in a wide pressure range of 0.04 to 4 Pa. At lower substrate temperatures the supply of small amounts of oxygen was required to maintain high transparency and achieve significant roughness for light scattering after wet chemical etching. Highest damp heat stability was found for ZnO:Al films deposited at low sputter pressures. This behavior could be correlated to the highly compact film structure of these films. ZnO:Al films deposited in dynamic DC mode exhibited inferior resistivity of 8–40 × 10− 4 Ω cm, which partly could be attributed to the specific design of the inline sputter system.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 502, Issues 1–2, 28 April 2006, Pages 311–316
نویسندگان
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