کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673722 | 1008952 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process](/preview/png/1673722.png)
چکیده انگلیسی
The gas-phase chemical species produced from both the direct decomposition of 1,1,3,3-tetramethyl-1,3-disilacyclobutane (TMDSCB) on a tungsten filament and the secondary reactions in the HWCVD reactor were identified by vacuum ultraviolet laser single-photon ionization coupled with time-of-flight mass spectrometry. TMDSCB decomposes on the filament to methyl and 1,1,3-trimethyl-1,3-disilacyclobutane-1-yl radicals. Subsequent hydrogen abstraction reactions from the parent molecule by methyl radicals and biradical combination reactions are dominant in the reactor. The formation of dimethylsilene (m/z = 72) through the ring Si-C bond cleavage is indirectly confirmed by the observation of the signal from 1,1,3,3,5,5-hexamethyl-1,3,5-trisilacyclohexane at m/z = 216. Tetra- and tri-methylsilane are also found to be formed in the HWCVD reactor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 12, 30 April 2009, Pages 3461-3465
Journal: Thin Solid Films - Volume 517, Issue 12, 30 April 2009, Pages 3461-3465
نویسندگان
L. Tong, Y.J. Shi,