کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673736 | 1008952 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2 Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2](/preview/png/1673736.png)
چکیده انگلیسی
Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H2 and the influence of H2 gas flow rate (F(H2)) on the film properties was investigated. The SiH4 gas flow rate was 1 sccm. At the CH4 gas flow rate (F(CH4)) of 1 sccm, nanocrystalline cubic SiC (nc-3C-SiC) grew even without H2. On the other hand, at F(CH4) = 2 sccm, amorphous SiC grew without H2 and nc-3C-SiC grew above F(H2) = 50 sccm. As F(H2) was increased, the crystallinity improved both at F(CH4) = 1 and 2 sccm. However, the mean crystallite size decreased at F(CH4) = 1 sccm and increased at F(CH4) = 2 sccm. We discuss growth mechanisms of nc-3C-SiC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 12, 30 April 2009, Pages 3520–3523
Journal: Thin Solid Films - Volume 517, Issue 12, 30 April 2009, Pages 3520–3523
نویسندگان
Yoshiki Hoshide, Yusuke Komura, Akimori Tabata, Akihiko Kitagawa, Akihiro Kondo,