کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673789 | 1008953 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Improved transport properties of microcrystalline silicon films grown by HWCVD with a variable hydrogen dilution process Improved transport properties of microcrystalline silicon films grown by HWCVD with a variable hydrogen dilution process](/preview/png/1673789.png)
The structure and the transport properties of microcrystalline silicon films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD/Cat-CVD), using different dilution ratios of silane in hydrogen, were investigated. Spectroscopic ellipsometry analysis revealed an increase in the thickness of amorphous incubation layer formed before nucleation and a reduction of the void volume fraction when hydrogen dilution decreases. Thus, a specific microcrystalline silicon film growth process was proposed, based on a variable dilution of silane in hydrogen. For films prepared in such conditions, the formation of the incubation layer was inhibited, which led to a drastic improvement in carrier transport along the growth direction as proved by the diffusion-induced time-resolved microwave conductivity data.
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 568–571