Photo-carrier transport in microcrystalline silicon films prepared by hot-wire CVD

Electronic transport properties of hydrogenated microcrystalline silicon films prepared by hot-wire CVD have been discussed. Near room temperature, the photo-transport occurs by thermionic emission of electrons over potential barriers between grain boundaries. The potential barrier height, which dominates the carrier mobility, decreases with increasing illumination intensity. The mobility-lifetime product (10− 7-10− 8 cm2 V− 1) at 300 K obtained experimentally is comparable with those obtained in films prepared by plasma enhanced CVD.