کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673804 | 1008953 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates](/preview/png/1673804.png)
چکیده انگلیسی
Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition in a CH4 gas flow rate of 1 sccm, and the influence of the gas flow rates of SiH4 and H2 gases on the film structure and properties were investigated. In the case of a H2 gas flow rate below 100 sccm, the SiC:H films obtained in SiH4 gas flow rates of 3 and 4 sccm were amorphous. On the other hand, when the H2 gas flow rate was above 150 sccm, SiH4 gas flow rates of 4 and 3 sccm resulted in a Si-crystallite-embedded amorphous SiC:H film and a nanocrystalline cubic SiC film, respectively. It was found that gas flow rates were important parameters for controlling film structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 626–629
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 626–629
نویسندگان
Akimori Tabata, Masahiko Mori,