SiCOI structure fabricated by catalytic chemical vapor deposition

Epitaxial growth of SiC on SOI substrates using a hot-mesh chemical vapor deposition (CVD) technique was investigated. This technique utilizes a catalytic reaction involving hot tungsten wires arranged in a mesh structure. Using this hot-mesh CVD method, SiC epitaxial growth on SOI substrates with a thin top Si layer was realized without formation of voids, which form readily in the thin Si top layer at temperatures above 800 °C. The SiC film grown on an SOI structure exhibited a large gage factor (GF) of − 27, which is approximately the same as that (GF = − 31.8) of a SiC epitaxial film on Si(100) grown at 1360 °C using atmospheric pressure CVD.