کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673851 | 1008953 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of silicon contamination of Ta filaments used for thin film silicon deposition
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of silicon contamination of Ta filaments used for thin film silicon deposition Investigation of silicon contamination of Ta filaments used for thin film silicon deposition](/preview/png/1673851.png)
چکیده انگلیسی
After extensive utilisation of tantalum (Ta) catalyst filaments for hot wire chemical vapor deposition (HWCVD) of thin silicon films a strong degradation takes place. A high concentration of silicon was found not only on the surface but also in the bulk of the tantalum filament. Visual microscopic investigations, Secondary Ion Mass Spectrometry (SIMS), X-ray Diffraction (XRD) and Energy Dispersive X-ray Analysis (EDX) indicate appearance of various silicides and formation of thick silicon layer (> 50 μm) on the filament surface. The high-power backscattered scanning electron microscopy (SEM BSE) and optical microscopic analysis of the filament cross section reveal a complicated, non-uniform structure of filaments after use. By XRD a recrystallisation of tantalum kernel was detected. The EDX analysis indicates that silicides on the filament surface have the highest concentration of Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 818-821
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 818-821
نویسندگان
D. Hrunski, B. Schroeder, M. Scheib, R.M. Merz, W. Bock, C. Wagner,