کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673938 | 1008954 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Size-dependent emission properties and intersubband transitions in cubic InN quantum dots and InxGa1 â xN clusters
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We theoretically studied size-dependent emission properties and intersubband (ISB) transitions in cubic InN (c-InN) quantum dots (QDs) and In-rich c-InGaN clusters. The quantum size effect can affect the energy levels and emission properties of such nano-structures, depending on composition, size, effective mass, and strain. In small c-InN QDs and In-rich c-InGaN clusters, strong quantum size effect enhances size-dependent emission properties and leads to fewer eigen-states. In larger c-InN QDs and In-rich InGaN clusters, ISB transitions between eigen-states of the conduction band can be applied in telecommunication devices. By varying the sizes of nano-structures, we can control the largest ISB transition energy difference between the ground state and the highest confined eigen-state. Simulation results also show that ISB absorption wavelengths can be altered by changing the composition and size of nano-structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7695-7700
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7695-7700
نویسندگان
Shih-Wei Feng,