کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673982 | 1008955 | 2007 | 5 صفحه PDF | دانلود رایگان |
Dependence of electrical properties of phase change Ge1Sb2Te4 thin film on structural transformation was investigated. The electrical resistivity of the film decreases with increasing annealing temperature with a steep drop at ∼ 230 °C (the second crystallization temperature), at which the structure of Ge1Sb2Te4 changes from face-centered cubic to trigonal state. The steep drop of resistivity at the second crystallization temperature is mainly due to the increase of hole density within the p-type film, according to Hall measurement. The crystallization process has been followed by in situ resistance measurement at various annealing temperatures. Transmission electron microscope and atomic force microscope were also employed to study the film.
Journal: Thin Solid Films - Volume 516, Issue 1, 1 November 2007, Pages 42–46