کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673990 1008955 2007 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of annealing-induced changes in CdS thin films using X-ray diffraction and Raman spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Study of annealing-induced changes in CdS thin films using X-ray diffraction and Raman spectroscopy
چکیده انگلیسی

We have investigated as grown and annealed (300 °C, 400 °C and 500 °C) thin films of CdS grown on GaAs (001) by chemical bath deposition. X-ray diffraction (XRD) shows that the as grown CdS film is polycrystalline and predominantly cubic. A residual compressive stress of the order of 1.45% in the as grown film relaxes on annealing the film at 300 °C. Furthermore, CdS film undergoes a structural phase transition from the metastable cubic phase to the stable hexagonal phase, when, annealed at 500 °C. This is accompanied by significant improvement in crystalline quality of the film. Line shape analysis of the asymmetry of the longitudinal optical phonon shows a disorder-activated mode, which correlates well with the crystalline quality estimated from XRD and photoluminescence measurements. The additional features observed in the Raman spectra ∼ 254 cm− 1 and 309 cm− 1 are investigated using temperature dependent Raman spectroscopy and identified as superposition of transverse optical: E1 (TO) and E2 phonons at q = 0 and combination mode (two zone-edge E2 phonons) respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 1, 1 November 2007, Pages 91–98
نویسندگان
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