کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674008 1008956 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Composition and atomic ordering of Ge/Si(001) wetting layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Composition and atomic ordering of Ge/Si(001) wetting layers
چکیده انگلیسی

A combination of X-ray diffraction with anomalous X-ray scattering at the Ge K edge and specular reflectivity measurements is used to reveal both composition and atomic ordering in Ge:Si wetting layers. By comparing the intensity distribution close to the (400) and (200) surface reflections we show that the Ge wetting layer is composed of a SiGe alloy which exhibits atomic ordering. Due to the Si interdiffusion the wetting layer thickness is larger than the nominal 3 ML Ge deposition. The chemical depth distribution is obtained from X-ray reflectivity measurements and confirms the enhanced Ge interdiffusion. These phenomena evidence the crucial interplay between surface kinetics and intermixing in SiGe thin films and nanostructures on Si(001) substrates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 14, 23 May 2007, Pages 5587–5592
نویسندگان
, , , , ,