Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs (001)

Molecular beam epitaxy of Fe3Si films on GaAs (001) is studied in situ by grazing incidence X-ray diffraction. Fe3Si grows layer-by-layer. During deposition the growth front roughens as indicated by the damping of the X-ray oscillations and corresponding atomic force micrographs. The X-ray oscillations are modified during growth at substrate temperatures of 180 °C and below.