کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674019 1008956 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Si nanocrystals in SiO2 films analyzed by small angle X-ray scattering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Si nanocrystals in SiO2 films analyzed by small angle X-ray scattering
چکیده انگلیسی

Amorphous SiO/SiO2 multilayers were studied using grazing-incidence small-angle X-ray scattering (GISAXS). Such SiO/SiO2 superlattices were prepared by alternately magnetron sputtering of 3 nm thin films of SiO and 3 nm of SiO2 (10 layers each) on Si (100) substrate. Rotation of the Si substrate during evaporation ensures the homogeneity of the films over the whole substrate. After evaporation the samples were annealed at 1050 °C for 2 h in vacuum or in air. The analysis of the 2D GISAXS pattern has shown that Si nanocrystals are formed in the annealed samples. Using a Guinier approximation, the inter-nanocrystal distance (10.5 nm) and radius of gyration (2.3 nm) have been obtained for the samples annealed in vacuum. Samples annealed in air have shown similar peak values which were however, much wider distributed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 14, 23 May 2007, Pages 5637–5640
نویسندگان
, , , , ,