کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674061 1008957 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Correlation between crystal growth and photosensitization of nanostructured TiO2 electrodes using supporting Ti substrates by self-assembled CdSe quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Correlation between crystal growth and photosensitization of nanostructured TiO2 electrodes using supporting Ti substrates by self-assembled CdSe quantum dots
چکیده انگلیسی

Crystal growth of semiconductor quantum dots (QDs) adsorbed on nanostructured TiO2 electrodes is important not only for crystallographic studies but also for improving the photovoltaic efficiency of semiconductor-sensitized solar cells. In this study, nanostructured TiO2 electrodes using supporting Ti substrates were prepared. These electrodes are then adsorbed with self-assembled CdSe QDs as photosensitizers to investigate the crystal growth and photoelectrochemical current properties. Average diameters of the CdSe QDs can be estimated from optical absorption spectra by using photoacoustic (PA) technique. PA technique is a powerful tool for evaluating the optical absorption of opaque and scattered samples because of the detection by photothermal phenomenon. When the adsorption time increases, the CdSe QDs diameter increases and then shows saturation for all the cases. Normal solution growth plus suppression (negative growth) contributions can be derived by PA spectroscopic analysis. Both of them depend on adsorption temperatures for CdSe QDs formation. Photosensitization of the nanostructured TiO2 electrodes in the visible region resulting from CdSe QDs deposition can be clearly observed. Incident photon to current conversion efficiency (IPCE) of CdSe QDs adsorbed at high temperature formation is smaller than that adsorbed at low temperature one, indicating the increase of recombination centers with increasing adsorption temperature. This implies that negative growth, or dissolving effect, produces much more recombination centers inside of CdSe QDs and/or interface between the QDs and TiO2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2426–2431
نویسندگان
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