کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674077 1008957 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical second harmonic generation measurements for investigating electron injection into a pentacene field effect transistor with Au source and drain electrodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Optical second harmonic generation measurements for investigating electron injection into a pentacene field effect transistor with Au source and drain electrodes
چکیده انگلیسی

The pentacene field effect transistors (FETs)' operation for the injection carrier was revealed by means of the drain current–elapsed time (Ids–t) and optical second harmonic generation (SHG) measurements. The charge carriers forming the conducting channel of pentacene FETs were mainly holes injected from the Au source electrode. Carrier injection from source and drain electrodes was followed by the carrier trapping, and the SHG signal modulated by the change in the electric field distribution between Au the source and drain electrodes was shown. In particular, at the off state of the FET, electron injection and succeeding trapping were suggested. Furthermore, hole injection assisted by trapped electrons was also suggested.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2513–2517
نویسندگان
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