کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674080 | 1008957 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved sublimation growth of single crystals of thiophene/phenylene co-oligomers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improved sublimation growth of single crystals of thiophene/phenylene co-oligomers Improved sublimation growth of single crystals of thiophene/phenylene co-oligomers](/preview/png/1674080.png)
چکیده انگلیسی
We have improved the sublimation recrystallization method using a handmade sublimation apparatus and optimizing various physical conditions. The improved apparatus comprises two closely aligned heaters and enables us to grow the large thiophene/phenylene co-oligomer (TPCO) crystals of high quality. We found it essential and effective for the crystal growth to adjust temperatures of these heaters and their temperature difference of ca. 40–50 °C. We fabricated organic field effect transistor (OFET) devices with the resulting crystals of a TPCO. Those devices show the p-type FET characteristics. The field effect mobilities increased with smaller thicknesses of the crystals; the maximum mobility recorded was 0.021 cm2/Vs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2527–2531
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2527–2531
نویسندگان
Takeshi Yamao, Satoshi Ota, Tomoharu Miki, Shu Hotta, Reiko Azumi,