کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674119 | 1008957 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial growth of p-sexiphenyl film on highly oriented pyrolytic graphite surface studied by scanning tunneling microscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The epitaxial growth of p-sexiphenyl (C36H26, 6P) on highly oriented pyrolytic graphite (HOPG) surface has been investigated by scanning tunneling microscopy (STM). 6P molecules prefer epitaxial growth with the long axis along the [110] direction (armchair direction) of the HOPG substrate, with the unit cell parameters b1 = 0.67 ± 0.06 nm, b2 = 5.97 ± 0.06 nm and angle of 88 ± 3° between them. The relation of the 6P overlayer lattice vectors with the HOPG substrate has also been deduced, i.e. the 5 × 1 supercell is in a point-on-point commensurate relation with respect to the HOPG substrate surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2711–2715
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2711–2715
نویسندگان
Zhi-Hong Wang, Kaname Kanai, Kai Iketaki, Yukio Ouchi, Kazuhiko Seki,