کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674130 1008957 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions
چکیده انگلیسی

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2762–2766
نویسندگان
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