کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674200 1008960 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interconnect and contact for nanoelectronics: Metallic TaSi2 nanowires
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Interconnect and contact for nanoelectronics: Metallic TaSi2 nanowires
چکیده انگلیسی

TaSi2 nanowires have been synthesized on Si substrate by annealing FeSi2 thin film and NiSi2 films at 950 °C in an ambient containing Ta vapor whose length would be grown up to 13 μm. The metallic TaSi2 nanowires exhibit excellent electrical properties with remarkable high failure current density of 3 × 108 A cm− 2. In addition, the growth mechanism is addressed in detail, The TaSi2 nanowires are formed in three steps: segregation of Si atoms from the FeSi2 thin film and NiSi2 films underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 22, 15 August 2007, Pages 8109–8112
نویسندگان
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