Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements

Ion-beam-synthesized β-FeSi2/Si interfaces were investigated by carrier-injection photoluminescence (CPL) measurements. The CPL intensity of Al-doped β-FeSi2/Si sample was larger than that of non-doped one. We obtained a carrier injection efficiency (γ) of γ = 0.41 in the Al-doped sample and γ = 0.19 in the non-doped one. These results revealed that Al-doping into β-FeSi2 is an effective technique for the improvement of β-FeSi2/Si interface which is defective due to ion implantation damages.