A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface

The adsorption studies of magnesium on Si(111) substrate have been performed using AES, LEED and EELS at various substrate temperatures. It is observed that the sticking coefficient of magnesium on the silicide surface is close to zero for temperatures greater than 100 °C. It has been shown that the magnesium silicide grows as continuous films on Si substrate at temperature 100-140 °C, while for temperatures higher than 170 °C the magnesium silicide grows in the form of islands.