Toward the β-FeSi2p-n homo-junction structure

β-FeSi2 thin films were prepared on various substrates, and the influence of the thermal expansion coefficient (TEC) and the softening temperature on the film quality were discussed. It was clarified that a crack-free β-FeSi2 film could be formed on a glass material substrate with a TEC close to that of β-FeSi2, and when the softening point of the substrate is close to the crystal growth temperature of β-FeSi2. A (β-FeSi2)/(MoSi2)/(Corning 1737 glass) stacked structure without leak current was prepared to demonstrate the possibility of a MoSi2 back electrode layer. Furthermore, the (Al-doped p-β-FeSi2)/(Ni-doped n-β-FeSi2) homo-junction was also prepared by the vacuum evaporation and thermal diffusion method. We have succeeded in achieving current-rectification to a β-FeSi2 thin film, although the anode current was small.