Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

Ga- or In-doped BaSi2 films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 1016 and 1017 cm− 3 at RT.