کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1674238 | 1008960 | 2007 | 5 صفحه PDF | دانلود رایگان |
The surface structure and composition of semiconductor/Cu(111) films prepared by thermal evaporation in an ultrahigh vacuum condition have been investigated. As Si atoms were deposited on a Cu(111) surface, diffused 3×3R300 spots were observed up to 2 monolayers while 1 × 1 spots become dimmer as revealed using low-energy electron diffraction technique. Because of a larger electron affinity of Si than that of Cu, the Cu L3M45M45 Auger line shifts to a lower kinetic energy. Annealing treatments at 425 K causes a splitting of the Cu L3M45M45 line. This shows the interdiffusion at the Si/Cu interface and the formation of a Cu-rich surface layer. After annealing treatments, the 3×3R300 domains grow and aggregate to form larger domains as revealed by the decreasing full-width at half maximum of diffraction spots. Ge/Cu(111) shows 1 × 1 structure as annealing up to 500 K. Lack of a dominant structure and a large valence diameter of Ge result in different structures as compared to Si/Cu(111).
Journal: Thin Solid Films - Volume 515, Issue 22, 15 August 2007, Pages 8285–8289