کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674328 1008961 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency
چکیده انگلیسی
In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 8, 29 February 2008, Pages 2162-2170
نویسندگان
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