کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1674355 | 1008962 | 2007 | 4 صفحه PDF | دانلود رایگان |
Based on an optimized bonding technique for semiconductor lasers, parametric investigations of different bonding configurations were performed using AuSn solder. No abrupt electrical degradation was observed for both face-up and face-down bonding configurations. The typical optical output achieved for face-up and face-down bonding approach was about 100 mW/facet and 150 mW/facet, respectively. Face-up bonded LDs exhibited a steady differential quantum efficiency ηD of ∼ 0.425 mW/mA before gradual degradation at 200 mA, while face-down bonded LDs improved its performance beyond 350 mA. The characteristic temperature T0 also improved to as much as 643 K for face-down bonded LDs. Spectrally-resolved emission measurement showed that the temperature rise in unbonded, face-up bonded and face-down bonded LDs were approximately 11, 7–8 and 2–3 °C, respectively. These investigations showed that the improved performances for face-down bonding approach compared to face-up approach were due to better thermal management.
Journal: Thin Solid Films - Volume 515, Issue 10, 26 March 2007, Pages 4340–4343