Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition

InN has been successfully grown on GaN with a thin InGaN intermediate layer by metalorganic chemical vapor deposition. A pyramid growth was observed for the InN with lateral size of about 270 nm and thickness of about 70-75 nm. This InN contributes to the green emission of the subsequently grown InGaN layer despite the V-pits formation on the surface. The InGaN intermediate layer serves to reduce the lattice mismatch between InN and GaN. Earlier attempt to grow InN directly in GaN resulted in indium droplet formation only.