MOVPE growth of AlxIn1−xP using tertiarybutylphosphine in pure N2 ambient

We have investigated metalorganic vapor phase epitaxy (MOVPE) growth of AlxIn1−xP alloy using tertiarybutylphosphine (TBP) as the phosphorus source in pure N2 ambient. The effect of the substrate temperature on the aluminum composition of AlxIn1−xP epilayers during the MOVPE growth has been studied. When the source flow rates were kept unchanged, the aluminum composition of the AlxIn1−xP epilayer increased monotonically when the substrate temperature, Tg, was raised from 580 °C to 660 °C during the growth. It became saturated when Tg reached 660 °C and above. The crystalline quality of the grown AlxIn1−xP epilayers has been investigated by X-ray diffraction and photoluminescence measurements. A linear relationship between the aluminum composition of the AlxIn1−xP epilayer and TMAl/(TMAl + TMIn) source flow ratio has been obtained when grown at the optimized growth temperature of Tg = 630 °C. It has also been observed that the aluminum incorporation coefficient of AlxIn1−xP epilayers decreased when the V/III source flow ratio was increased during the MOVPE growth.