کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674470 | 1008964 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The microstructure of Cu(In,Ga)S2 solar cell absorber films prepared using three-stage and two-stage evaporation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
The microstructure of three-stage Cu-poor Cu(In,Ga)S2 solar cell absorbers has been compared with that of two-stage Cu-rich absorbers using high-resolution Transmission Electron Microscopy. It was found that the grains from three-stage evaporation have more stacking faults, and most of the grain boundaries are irregular, such as sawtooth shaped. The grains from two-stage evaporation have less defects, and the grain boundaries are straight. The difference of growth mechanisms between three-stage and two-stage evaporation are discussed and compared to the case of Cu(In,Ga)Se2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 7046–7050
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 7046–7050
نویسندگان
R. Kaigawa, T. Wada, R. Klenk,