کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674511 1008965 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors
چکیده انگلیسی

Experimental measurements and full-2D numerical simulations show that velocity saturation effects in polysilicon thin-film transistor (TFTs) cannot be neglected in order to obtain a precise modelling of output characteristics. Since full-2D numerical simulations are time consuming and unpractical for circuit simulations, we have developed a new quasi-2D model, that takes into account both velocity saturation effects and the presence of a longitudinal electric field in the Poisson's equation, and includes the effect of parasitic bipolar transistor (PBT) action to reproduce kink effect. The agreement of the quasi-2D model with experimental data from p-channel polysilicon TFTs is very satisfactory even for short channel device, and the presence of a velocity-saturated region with a nearly constant free carrier concentration is reproduced without introducing further assumptions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7417–7421
نویسندگان
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