Polysilicon high frequency devices for large area electronics: Characterization, simulation and modeling

Laser Crystallised Polysilicon Thin Film Transistors have now sufficient good conduction properties to be used in high-frequency applications. In this work, we report the results for 5 μm long polysilicon TFTs obtained at frequencies up to several hundred MHz for applications such as RFID tags or System-On-Panel. In order to investigate the device operation, DC and AC two-dimensional simulations of these devices in the Effective Medium framework have been performed. In the light of simulation results, the effects of carrier trapping and carrier transit on the device capacitances as a function of dimensions are analysed and compared. An equivalent small-signal circuit which accounts for the behaviour of these transistors in all regions of operation is proposed and a model for the most relevant elements of this circuit is presented. To validate our simulation results, scattering-parameters (S-parameters) measurements are performed for several structures such as multi-finger, serpentine and linear architectures and the most meaningful parameters will be given. Cut-off frequencies as high as 300 MHz and maximum oscillation frequencies of about 600 MHz have been extracted.