کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674514 | 1008965 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression](/preview/png/1674514.png)
چکیده انگلیسی
We present, for the first time, the application of the asymmetric fingered thin film transistor (AF-TFT) architecture to self-aligned p-channel TFTs for kink effect suppression. In AF-TFT the transistor channel region is split into two zones with different lengths (L1 > L2) separated by a floating p+ region. A fourth electrode, contacting the floating p+ region, allowed us to measure the individual electrical characteristics of the two sub-TFTs. Output characteristics show that substantial kink effect reduction can be achieved when the sub-TFT placed at the drain end of the device has an L2 âªÂ L1. The electrical characteristics were analysed by using numerical simulations in the framework of the two-transistor model and we show that kink effect suppression arises from the operation in saturation regime of the source sub-TFT. The electrical characteristics of the fabricated p-channel AF-TFTs show a complete kink effect suppression, making these devices very attractive for current drivers in organic light emitting displays.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7433-7436
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7433-7436
نویسندگان
A. Bonfiglietti, M. Cuscunà , M. Rapisarda, A. Pecora, L. Mariucci, G. Fortunato, C. Caligiore, E. Fontana, S. Leonardi, F. Tramontana,