کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674514 | 1008965 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present, for the first time, the application of the asymmetric fingered thin film transistor (AF-TFT) architecture to self-aligned p-channel TFTs for kink effect suppression. In AF-TFT the transistor channel region is split into two zones with different lengths (L1 > L2) separated by a floating p+ region. A fourth electrode, contacting the floating p+ region, allowed us to measure the individual electrical characteristics of the two sub-TFTs. Output characteristics show that substantial kink effect reduction can be achieved when the sub-TFT placed at the drain end of the device has an L2 âªÂ L1. The electrical characteristics were analysed by using numerical simulations in the framework of the two-transistor model and we show that kink effect suppression arises from the operation in saturation regime of the source sub-TFT. The electrical characteristics of the fabricated p-channel AF-TFTs show a complete kink effect suppression, making these devices very attractive for current drivers in organic light emitting displays.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7433-7436
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7433-7436
نویسندگان
A. Bonfiglietti, M. Cuscunà , M. Rapisarda, A. Pecora, L. Mariucci, G. Fortunato, C. Caligiore, E. Fontana, S. Leonardi, F. Tramontana,