کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674516 1008965 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogenation of nanocrystalline Si thin film transistors employing inductively coupled plasma chemical vapor deposition for flexible electronics
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Hydrogenation of nanocrystalline Si thin film transistors employing inductively coupled plasma chemical vapor deposition for flexible electronics
چکیده انگلیسی

We have investigated the plasma hydrogenation effect on a nanocrystalline silicon (nc-Si) thin film transistor (TFT) fabricated by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150 °C. The top-gate nc-Si TFT showed a mobility of ∼ 6 cm2/Vs and Vth of 8 V. The hydrogenation employing ICP-CVD was performed at 100 °C for 4 min in order to improve the characteristics of nc-Si TFT. The mobility was increased from ∼ 6 cm2/Vs to 11 cm2/Vs. The Vth of the nc-Si TFTs was decreased to about 6.8 V from 8.1 V. The on-current at the saturation regime also increased by 66% while the off current was increased slightly. The improvement of mobility, threshold voltage and on-current can be attributed to the hydrogen passivation of the Si dangling bonds in the nc-Si film. The experimental results showed that the 100 °C ICP-CVD hydrogenation is effective to improve the 150 °C nc-Si TFT.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7442–7445
نویسندگان
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