کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674524 1008965 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance–voltage measurements: Capabilities and limits
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance–voltage measurements: Capabilities and limits
چکیده انگلیسی

The capabilities and limitations of the well-known C–V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C–V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7481–7485
نویسندگان
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