|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|1674537||1008965||2007||4 صفحه PDF||سفارش دهید||دانلود رایگان|
Electronic structure calculations are presented for various model structures of the crystalline and amorphous phases of Ge2Sb2Te5. The structures are all found to possess a band gap of order 0.5 eV, indicating closed shell behaviour. It is pointed out that structural vacancies in A7-like Ge2Sb2Te5 are not electronically active. In addition, A7-like structures do not support valence alternation pair defects, which are one model of the conduction processes in the amorphous phase in non-volatile memories.
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7538–7541