کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674539 | 1008965 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Aging effects and electrical stability in pentacene thin film transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Aging effects and electrical stability in pentacene thin film transistors Aging effects and electrical stability in pentacene thin film transistors](/preview/png/1674539.png)
چکیده انگلیسی
We have studied the transfer characteristic variations induced by aging effects and applied voltage in top contact pentacene thin film transistors (OTFTs) fabricated by using Polymethylmetacrylate buffer layer. The electrical stability of pentacene OTFTs was tested by applying prolonged bias stress (up to 104 s) with gate voltage Vgstress = − 30 V and + 30 V. The environmental effects were analysed by measuring the degradation of electrical characteristics of OTFT exposed to air. The results have been analysed in terms of trap state model, evaluating the channel conductance using a one-dimensional approach. This allows us to correlate the transfer characteristics variations to changes in localised state distribution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7546–7550
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7546–7550
نویسندگان
S. Cipolloni, L. Mariucci, A. Valletta, D. Simeone, F. De Angelis, G. Fortunato,