Numerical simulations of conduction and low-frequency noise in polysilicon thin film transistors

Numerical simulations of static conduction and low-frequency noise are carried out in N-channel polysilicon thin film transistors. The Meyer–Neldel effect associated with the drain current is related to trapping/detrapping processes of carriers from dangling bonds located at the interface. Low-frequency noise is simulated by generation–recombination processes. The sources responsible of noise in the thin film transistors are mainly located close to the interface. The microscopic parameter deduced from numerical simulation is lower than the macroscopic one deduced from noise measurements. The ratio of these two parameters is considered as a factor of merit to qualify thin film transistor technology.