کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674558 | 1008965 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon incorporation in silicon-carbon films grown at different substrate temperatures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Hydrogenated microcrystalline silicon-carbon thin films have been deposited by plasma enhanced chemical vapour deposition technique at the substrate temperatures of 250 °C and 400 °C varying the radio frequency (RF) power in the 10-100 W range. The effects of substrate temperature and RF power on the structural, compositional, optical, and electrical properties have been investigated. The increase of substrate temperature or RF power leads to a decrease of crystallinity degree and an enhancement of carbon content. Optical absorption in the UV-visible region and electrical conductivity are affected in a different way by the RF power and substrate temperature variations. Silicon grain nucleation of films deposited at the temperature of 250 °C on commercial doped tin oxide substrate has been explored, for different RF power, by means of X-ray diffraction measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7634-7638
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7634-7638
نویسندگان
U. Coscia, G. Ambrosone, P. Maddalena, A. Setaro, A.R. Phani, M. Passacantando,