کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674574 | 1008965 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic thin-film transistors using thin ormosil-based hybrid dielectric
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We synthesized a novel thermally-crosslinkable ormosil-based hybrid material as a solution-processable dielectric layer for organic thin-film transistors (OTFTs). Dielectrics with a thickness of 50-260Â nm were fabricated via spin-coating in order to evaluate their applicability as an ultra-thin gate dielectric. It was observed that the capacitance of the hybrid dielectric increases with decreasing film thickness. Hybrid dielectrics with a thickness of 260Â nm and 160Â nm, respectively, exhibited adequate leakage current behavior. Coplanar-type OTFTs were fabricated using each of the hybrid dielectrics (i.e., thickness of 260Â nm and 160Â nm). The off-current, threshold voltage, and field-effect mobility of both transistors were analyzed to investigate the effects of capacitance and film thickness on the electrical performance of the transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7701-7705
Journal: Thin Solid Films - Volume 515, Issue 19, 16 July 2007, Pages 7701-7705
نویسندگان
Sunho Jeong, Dongjo Kim, Sul Lee, Bong Kyun Park, Jooho Moon,