Optical and electrical characterization of chemically and photopolymerized C60 thin films on silicon substrates

A comparative characterization of C60 thin films grown on silicon substrate by Physical Vapor Deposition and polymerized by chemical reaction with 1,8-octanediamine vapor or UV Pulsed laser irradiation has been carried out by means of Atomic Force Microscopy, and optical reflectance, transmittance and photoluminescence spectroscopies. The photovoltaic response and electrical characteristics of Au/C60/Si diode structures have been investigated. The greatest photoluminescence efficiency and light transmittance, and at the same time the least photocurrent of diode structure were observed for chemically polymerized C60. Found differences in morphology, optical, photoelectric and electrical properties of C60 films polymerized by two methods indicate a difference in their composition.